BSP322P L6327

BSP322P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS(on),max 800 mΩ -1 ID A • Logic level • Avalanche rated PG-SOT-223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Lead free Packing BSP322P PG-SOT-223 L6327: 1000 pcs/reel BSP322P Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 1 T C=70 °C 0.8 Unit A Pulsed drain current I D,pulse T C=25 °C 4 Avalanche energy, single pulse E AS I D=-1 A, R GS=25 Ω 57 mJ Gate source voltage V GS ±20 V Power dissipation P tot 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class T C=25 °C JESD22-A114-HBM 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.04 1A (250V to 500V) page 1 2011-04-05 BSP322P Parameter Values Symbol Conditions Unit min. typ. max. minimal footprint, steady state - - 115 6 cm2 cooling area1), steady state - - 70 Thermal characteristics Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 μA -100 - - Gate threshold voltage V GS(th) V DS=V GS,I D=-380 µA -2.0 -1.5 -1.0 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1 A - 600 800 mΩ V GS=-4.5 V, I D=-0.93 A - 808 1000 0.7 1.4 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.8 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 1.04 page 2 2011-04-05 BSP322P Parameter Values Symbol Conditions Unit min. typ. max. - 280 372 - 70 94 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 34 51 Turn-on delay time t d(on) - 4.6 6.9 Rise time tr - 4.3 6.5 Turn-off delay time t d(off) - 21.2 31.8 Fall time tf - 8.3 12.5 Gate to source charge Q gs - 0.8 1.0 Gate to drain charge Q gd - 4.3 6.4 Gate charge total Qg - 12.4 16.5 Gate plateau voltage V plateau - 2.9 - V - - -1.0 A - - -4.0 - 0.84 1.2 V - 47 - ns - 84 - nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=10 V, I D=-1 A, R G=6 Ω pF ns Gate Charge Characteristics 2) V DD=-80 V, I D=-1 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Rev 1.04 Q rr T C=25 °C V GS=0 V, I F=-1 A, T j=25 °C V R=50 V, I F=|I S|, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2011-04-05 BSP322P 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|≥10 V 1.2 2 1 1.5 -I D [A] P tot [W] 0.8 1 0.6 0.4 0.5 0.2 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 100 µs 0.5 0.2 1 ms 100 101 Z thJS [K/W] -I D [A] 0.1 10 ms 100 ms 10-1 0.05 0.02 100 0.01 single pulse DC 10-2 10-1 10 0 10 1 10 2 10 3 -V DS [V] Rev 1.04 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2011-04-05 BSP322P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 4 1.6 -4 V -10 V -3 V -7 V -5 V 1.4 -3.5 V -4 V 3 1.2 1 R DS(on) [Ω] -I D [A] -3.5 V 2 -5 V 0.8 -7 V -10 V 0.6 -3 V 1 0.4 0.2 0 0 0 2 4 6 8 10 0 1 -V DS [V] 2 3 4 3 4 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4 3 3 25 °C 125 °C g fs [S] -I D [A] 2 2 1 1 0 0 0 1 2 3 4 5 Rev 1.04 0 1 2 -I D [A] -V GS [V] page 5 2011-04-05 BSP322P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 µA 2 3 1.5 max. -V GS(th) [V] R DS(on) [Ω] 2 98 % 1 typ. min. 1 0.5 typ. 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 10 25 °C, typ 150 °C, typ Ciss 1 I F [A] C [pF] 150 °C, 98% 102 25 °C, 98% Coss 0.1 Crss 101 0.01 0 20 40 60 80 100 Rev 1.04 0 0.5 1 1.5 -V SD [V] -V DS [V] page 6 2011-04-05 BSP322P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1 A pulsed parameter: T j(start) parameter: V DD 10 12 50 V 20 V 10 80 V - VGS [V] -I AV [A] 8 1 25 °C 6 100 °C 4 125 °C 2 0.1 0 1 10 100 1000 0 5 t AV [µs] 10 15 - Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 120 V GS 115 Qg 110 -V BR(DSS) [V] 105 100 95 V g s(th) 90 85 80 Q g(th) Q sw 75 Q gs 70 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev 1.04 page 7 2011-04-05 BSP322P Package Outline: PG-SOT-223 Footprint: Packaging: Dimensions in mm Rev 1.04 page 8 2011-04-05 BSP322P Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.04 page 9 2011-04-05